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2970 In Stock
BC858B RFG
2970 In Stock
BC858B RFG
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Manufacturer No:
Taiwan Semiconductor Corporation
Manufacturer:
Taiwan Semiconductor Corporation
Category:
Single BJT Transistors
Package:
Description Differential:
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Type
DESCRIPTION
Mfr
RoHS
yes
Mount
Width
Height
Length
Pbfree
Series
Weight
Package
hFE Min
HTS Code
8541.21.00.95
ECCN Code
EAR99
Frequency
Inventory
56918
Lead Free
Packaging
Tape & Reel (TR)
Pin Count
Published
REACH SVHC
VCEsat-Max
Part Status
Active
Power - Max
200mW
RoHS Status
ROHS3 Compliant
Subcategory
Termination
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JESD-609 Code
Mounting Type
Surface Mount
Surface Mount
YES
Terminal Form
GULL WING
Current Rating
Number of Pins
Package / Case
TO-236-3, SC-59, SOT-23-3
Product Status
Case Connection
Contact Plating
Terminal Finish
Transistor Type
PNP
Base Part Number
Factory Lead Time
24 Weeks
Power Dissipation
Terminal Position
DUAL
Additional Feature
Number of Elements
1
Reference Standard
Voltage - Rated DC
Radiation Hardening
Qualification Status
Not Qualified
Transition Frequency
100MHz
Element Configuration
Max Breakdown Voltage
Max Collector Current
Max Power Dissipation
Operating Temperature
-55°C~150°CTJ
Polarity/Channel Type
PNP
Frequency - Transition
100MHz
Gain Bandwidth Product
Number of Terminations
3
Transistor Application
Supplier Device Package
Emitter Base Voltage (VEBO)
Transistor Element Material
SILICON
Continuous Collector Current
Collector Base Voltage (VCBO)
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector-Base Capacitance-Max
Current - Collector (Ic) (Max)
100mA
Collector Emitter Voltage (VCEO)
Current - Collector Cutoff (Max)
100nA ICBO
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Collector Emitter Breakdown Voltage
Collector Emitter Saturation Voltage
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Voltage - Collector Emitter Breakdown (Max)
30V
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